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onsemi FDMS86350ET80 MOSFETs

MOSFETs 80V N-Channel PowerTrench MOSFET

2 Activeonsemi8-PQFN (5x6)$17.09
FDMS86350ET80 - No Image Available

Same model may have multiple batches, images only for reference.

FDMS86350ET80
Manufacturer
Part Number (MPN)
FDMS86350ET80
Detailed Description
MOSFETs 80V N-Channel PowerTrench MOSFET
Package
8-PQFN (5x6)
Lifecycle Status
Active
Datasheet
PDF FDMS86350ET80 Datasheet
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Technical Specifications

onsemi FDMS86350ET80 MOSFETs technical specifications.

General

Series
PowerTrench®
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 250µA
Gate Charge Qg Max Vgs
155 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
8030 pF @ 40 V
Power Dissipation Max
3.3W (Ta), 187W (Tc)

Alternate Parts Comparison (FDMS86350ET80 vs FDMS8D8N15C vs FDMS10C4D2N vs FDMS4D0N12C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C25A (Ta), 198A (Tc)12.2A (Ta), 85A (Tc)17A (Tc)18.5A (Ta), 114A (Tc)
Drain to Source Voltage Vdss80 V150 V100 V120 V
Drive Voltage Max Rds on Min Rds on8V, 10V8V, 10V6V, 10V6V, 10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs155 nC @ 10 V50 nC @ 10 V65 nC @ 10 V82 nC @ 10 V
Input Capacitance Ciss Max Vds8030 pF @ 40 V3600 pF @ 75 V4500 pF @ 50 V6460 pF @ 60 V
Power Dissipation Max3.3W (Ta), 187W (Tc)2.7W (Ta), 132W (Tc)125W (Tc)2.7W (Ta), 106W (Tc)
Rds on Max ID Vgs2.4mOhm @ 25A, 10V8.8mOhm @ 45A, 10V4.2mOhm @ 44A, 10V4mOhm @ 67A, 10V
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