onsemi FDMS10C4D2N MOSFETs
MOSFETs Energy Inversion DC-AC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FDMS10C4D2N
Detailed Description
MOSFETs Energy Inversion DC-AC
Package
8-PQFN (5x6)
Lifecycle Status
Active
Datasheet
FDMS10C4D2N Datasheet
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Technical Specifications
onsemi FDMS10C4D2N MOSFETs technical specifications.
General
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
65 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
4500 pF @ 50 V
Fet Type
N-Channel
Power Dissipation Max
125W (Tc)
Alternate Parts Comparison (FDMS10C4D2N vs FDMS4D0N12C vs FDMS86200DC vs FDMS86101DC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 17A (Tc) | 18.5A (Ta), 114A (Tc) | 9.3A (Ta), 28A (Tc) | 14.5A (Ta), 60A (Tc) |
| Description | MOSFET N-CH 100V 17A 8PQFN | MOSFET N-CH 120V 18.5A/114A 8QFN | MOSFET N-CH 150V 9.3A DLCOOL56 | MOSFET N-CH 100V 14.5A DLCOOL56 |
| Detailed Description | N-Channel 100 V 17A (Tc) 125W (Tc) Surface Mount 8-PQFN (5x6) | N-Channel 120 V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) Surface Mount 8-PQFN (5x6) | N-Channel 150 V 9.3A (Ta), 28A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6) | N-Channel 100 V 14.5A (Ta), 60A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6) |
| Drain to Source Voltage Vdss | 100 V | 120 V | 150 V | 100 V |
| Drive Voltage Max Rds on Min Rds on | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 65 nC @ 10 V | 82 nC @ 10 V | 42 nC @ 10 V | 44 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 4500 pF @ 50 V | 6460 pF @ 60 V | 2955 pF @ 75 V | 3135 pF @ 50 V |
| Action |
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