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onsemi FDMS86202ET120 MOSFETs

MOSFETs 120V N-Channel Shielded Gate PowerTrench<sup> </sup> MOSFET

4 Activeonsemi8-PQFN (5x6)$9.83
FDMS86202ET120 - No Image Available

Same model may have multiple batches, images only for reference.

FDMS86202ET120
Manufacturer
Part Number (MPN)
FDMS86202ET120
Detailed Description
MOSFETs 120V N-Channel Shielded Gate PowerTrench<sup> </sup> MOSFET
Package
8-PQFN (5x6)
Lifecycle Status
Active
Datasheet
PDF FDMS86202ET120 Datasheet
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Technical Specifications

onsemi FDMS86202ET120 MOSFETs technical specifications.

General

Series
PowerTrench®
Package / Case
8-PowerTDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
64 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
4585 pF @ 60 V
Power Dissipation Max
3.3W (Ta), 187W (Tc)

Alternate Parts Comparison (FDMS86202ET120 vs FDMS8D8N15C vs FDMS10C4D2N vs FDMS4D0N12C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFN8-PowerTDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C13.5A (Ta), 102A (Tc)12.2A (Ta), 85A (Tc)17A (Tc)18.5A (Ta), 114A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss120 V150 V100 V120 V
Drive Voltage Max Rds on Min Rds on6V, 10V8V, 10V6V, 10V6V, 10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs64 nC @ 10 V50 nC @ 10 V65 nC @ 10 V82 nC @ 10 V
Input Capacitance Ciss Max Vds4585 pF @ 60 V3600 pF @ 75 V4500 pF @ 50 V6460 pF @ 60 V
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