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onsemi FDMC007N30D MOSFETs

MOSFETs Dual N-Channel PowerTrench MOSFET

2,240 ActiveonsemiFDMC007N8-PowerWDFN$0.46
FDMC007N30D 8-PowerWDFN package illustration

Same model may have multiple batches, images only for reference.

FDMC007N30D
Manufacturer
Part Number (MPN)
FDMC007N30D
Base Model
Detailed Description
MOSFETs Dual N-Channel PowerTrench MOSFET
Package
8-PowerWDFN
Lifecycle Status
Active
Datasheet
PDF FDMC007N30D Datasheet
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Ordering Code Family

FDMC007N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

onsemi FDMC007N30D MOSFETs technical specifications.

General

Package / Case
8-PowerWDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
3V @ 250µA
Gate Charge Qg Max Vgs
34nC @ 10V
Input Capacitance Ciss Max Vds
1110pF @ 15V, 2360pF @ 15V
Power Max
1.9W, 2.5W
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)

Alternate Parts Comparison (FDMC007N30D vs FDMC007N08LCDC vs FDMC007N08LC vs FDMC8032L)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerWDFN8-PowerWDFN8-PowerWDFN8-PowerWDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveObsolete
Configuration2 N-Channel (Dual)SingleSingle2 N-Channel (Dual)
Current Continuous Drain ID 25 C46A64A (Tc)66A (Tc)7A
Drain to Source Voltage Vdss30V80 V80 V40V
Gate Charge Qg Max Vgs34nC @ 10V44 nC @ 10 V41 nC @ 10 V11nC @ 10V
Input Capacitance Ciss Max Vds1110pF @ 15V, 2360pF @ 15V3070 pF @ 40 V2940 pF @ 40 V720pF @ 20V
Rds on Max ID Vgs11.6mOhm @ 10A, 10V6.8mOhm @ 22A, 10V7mOhm @ 21A, 10V20mOhm @ 7A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs Th Max ID3V @ 250µA2.5V @ 130µA2.5V @ 120µA3V @ 250µA
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