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onsemi FDMC007N08LCDC MOSFETs

N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 64A, 6.8mΩ, 3000-REEL

240,000 ActiveonsemiFDMC007N8-PQFN (3.3x3.3)$0.97
FDMC007N08LCDC 8-PQFN (3.3x3.3) package illustration

Same model may have multiple batches, images only for reference.

FDMC007N08LCDC
Manufacturer
Part Number (MPN)
FDMC007N08LCDC
Base Model
Detailed Description
N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 64A, 6.8mΩ, 3000-REEL
Package
8-PQFN (3.3x3.3)
Lifecycle Status
Active
Datasheet
PDF FDMC007N08LCDC Datasheet
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Ordering Code Family

FDMC007N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

onsemi FDMC007N08LCDC MOSFETs technical specifications.

General

Series
PowerTrench®
RoHS
Yes
Number of Channels
1 Channel
Package / Case
8-PowerWDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
2.5V @ 130µA
Gate Charge Qg Max Vgs
44 nC @ 10 V
Vgs Max
±20V

Alternate Parts Comparison (FDMC007N08LCDC vs FDMC007N30D vs FDMC007N08LC vs FDMC8010DC)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerWDFN8-PowerWDFN8-PowerWDFN8-PowerWDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
ConfigurationSingle2 N-Channel (Dual)SingleSingle
Current Continuous Drain ID 25 C64A (Tc)46A66A (Tc)37A (Ta)
Drain to Source Voltage Vdss80 V30V80 V30 V
Gate Charge Qg Max Vgs44 nC @ 10 V34nC @ 10V41 nC @ 10 V94 nC @ 15 V
Input Capacitance Ciss Max Vds3070 pF @ 40 V1110pF @ 15V, 2360pF @ 15V2940 pF @ 40 V7080 pF @ 15 V
Rds on Max ID Vgs6.8mOhm @ 22A, 10V11.6mOhm @ 10A, 10V7mOhm @ 21A, 10V1.28mOhm @ 37A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs Th Max ID2.5V @ 130µA3V @ 250µA2.5V @ 120µA3V @ 250µA
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