onsemi FDB86363-F085 MOSFETs
MOSFETs N-Channel Power Trench MOSFET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FDB86363-F085
Detailed Description
MOSFETs N-Channel Power Trench MOSFET
Package
TO-263 (D2PAK)
Lifecycle Status
Obsolete
Datasheet
FDB86363-F085 Datasheet
Quick Jump:
Technical Specifications
onsemi FDB86363-F085 MOSFETs technical specifications.
General
Series
PowerTrench®
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Gate Charge Qg Max Vgs
150 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
10000 pF @ 40 V
Power Dissipation Max
300W (Tc)
Fet Type
N-Channel
Alternate Parts Comparison (FDB86363-F085 vs FDB86563-F085 vs FDB42AN15A0 vs BBS3002-DL-1E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Obsolete | Obsolete |
| Current Continuous Drain ID 25 C | 110A (Tc) | 110A (Tc) | 5A (Ta), 35A (Tc) | 100A (Ta) |
| Description | MOSFET N-CH 80V 110A D2PAK | MOSFET N-CH 60V 110A D2PAK | MOSFET N-CH 150V 5A/35A TO263AB | MOSFET P-CH 60V 100A D2PAK |
| Detailed Description | N-Channel 80 V 110A (Tc) 300W (Tc) Surface Mount TO-263 (D2PAK) | N-Channel 60 V 110A (Tc) 333W (Tc) Surface Mount TO-263 (D2PAK) | N-Channel 150 V 5A (Ta), 35A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK) | P-Channel 60 V 100A (Ta) 90W (Tc) Surface Mount TO-263 (D2PAK) |
| Drain to Source Voltage Vdss | 80 V | 60 V | 150 V | 60 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 6V, 10V | 4V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 150 nC @ 10 V | 163 nC @ 10 V | 39 nC @ 10 V | 280 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 10000 pF @ 40 V | 10100 pF @ 30 V | 2150 pF @ 25 V | 13200 pF @ 20 V |
| Action |
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