onsemi EMC5DXV5T1G BJTs
50V NPN/PNP BJT Transistor, 100mA, SOT-553-5
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
EMC5DXV5T1G
Detailed Description
50V NPN/PNP BJT Transistor, 100mA, SOT-553-5
Package
SOT-553
Lifecycle Status
Active
Datasheet
EMC5DXV5T1G Datasheet
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Technical Specifications
onsemi EMC5DXV5T1G BJTs technical specifications.
General
Package / Case
SOT-553
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V / 20 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
50V
Alternate Parts Comparison (EMC5DXV5T1G vs EMC2DXV5T1G vs MBT3906DW1T1G vs BC847CDW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-553 | SOT-553 | 6-TSSOP | 6-TSSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Production | Production |
| Current Collector IC Max | 100mA | 100mA | 200mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V / 20 @ 5mA, 10V | 60 @ 5mA, 10V | 100 @ 10mA, 1V | 420 @ 2mA, 5V |
| Power Max | 500mW | 500mW | 150mW | 380mW |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 2 PNP (Dual) | 2 NPN (Dual) |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 400mV @ 5mA, 50mA | 600mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 50V | 50V | 40V | 45V |
| Current Collector Cutoff Max | 500nA | 500nA | -- | 15nA (ICBO) |
| Operating Temperature | -- | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package | -- | SOT-553 | SOT-363-6 | SOT-363-6 |
| Action |
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