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onsemi EMC2DXV5T1G BJTs

Complementary Bipolar Digital Transistor (BRT), SOT-553, 5 LEAD, 4000-REEL

360,000 ActiveonsemiSOT-553$0.14
EMC2DXV5T1G SOT-553 package illustration

Same model may have multiple batches, images only for reference.

EMC2DXV5T1G
Manufacturer
Part Number (MPN)
EMC2DXV5T1G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), SOT-553, 5 LEAD, 4000-REEL
Package
SOT-553
Lifecycle Status
Active
Datasheet
PDF EMC2DXV5T1G Datasheet
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Technical Specifications

onsemi EMC2DXV5T1G BJTs technical specifications.

General

Series
EMC2DXV5
RoHS
Yes
Number of Channels
2 Channel
Package / Case
SOT-553
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 150°C
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
60 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA

Related Parts Comparison (EMC2DXV5T1G vs EMC5DXV5T1G vs MBT3906DW1T1G vs BC847CDW1T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-553SOT-5536-TSSOP6-TSSOP
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveProductionProduction
Current Collector IC Max100mA100mA200mA100mA
Dc Current Gain Hfe Min IC Vce60 @ 5mA, 10V80 @ 5mA, 10V / 20 @ 5mA, 10V100 @ 10mA, 1V420 @ 2mA, 5V
Power Max500mW500mW150mW380mW
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)2 PNP (Dual)2 NPN (Dual)
Vce Saturation Max Ib IC250mV @ 300µA, 10mA250mV @ 300µA, 10mA400mV @ 5mA, 50mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max50V50V40V45V
Operating Temperature- 55°C ~ + 150°C---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYes--CompliantCompliant
Current Collector Cutoff Max500nA500nA--15nA (ICBO)
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