NXP Semiconductors PSMN015-100P,127 MOSFETs
MOSFET N-CH 100V 75A TO220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN015-100P,127
Base Model
Detailed Description
MOSFET N-CH 100V 75A TO220AB
Package
TO-220AB
Lifecycle Status
Active
Datasheet
PSMN015-100P,127 Datasheet
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Technical Specifications
NXP Semiconductors PSMN015-100P,127 MOSFETs technical specifications.
General
RoHS
True
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
75 A
Rds on Drain Source Resistance
15 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PSMN015-100P,127 vs PSMN015-110P vs PSMN2R0-30YLE,115 vs PSMN013-30MLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | True | True | True | True |
| Package | TO-220AB | TO-220-3 | SOT-669-5 | LFPAK-33-8 |
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| ID Continuous Drain Current | 75 A | 75 A | -- | -- |
| Pd Power Dissipation | 300 W | 300 W | -- | -- |
| Rds on Drain Source Resistance | 15 mOhms | 40.5 mOhms | -- | -- |
| Technology | Si | Si | -- | -- |
| Transistor Polarity | N-Channel | N-Channel | -- | -- |
| Unit Weight | 0.068784 oz | 0.068784 oz | -- | -- |
| Vds Drain Source Breakdown Voltage | 100 V | 110 V | -- | -- |
| Action |
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