NXP Semiconductors PMZB670UPE,315 MOSFETs
20 V, single P-channel Trench MOSFET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMZB670UPE,315
Detailed Description
20 V, single P-channel Trench MOSFET
Package
DFN-1006-3
Lifecycle Status
Active
Datasheet
PMZB670UPE,315 Datasheet
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Technical Specifications
NXP Semiconductors PMZB670UPE,315 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
680 mA
Rds on Drain Source Resistance
850 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (PMZB670UPE,315 vs PMZ320UPEYL vs NX7002BKMYL vs PMDPB58UPE,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DFN-1006-3 | DFN-1006-3 | DFN-1006-3 | DFN-2020-6 |
| Lifecycle Status | -- | Production | Production | Production |
| Automotive Qualified | -- | N | N | N |
| Channel Type | -- | P | N | P |
| Chemical Content | -- | PMZ320UPE | NX7002BKM | PMDPB58UPE |
| Ciss Typ Pf | -- | 122 | 23.6 | 804 |
| Coss Typ Pf | -- | 11 | 4.6 | 95 |
| Date | -- | 2015-03-24 | 2014-10-02 | 2012-06-20 |
| ID Max a | -- | -1 | 0.35 | -4.5 |
| Nr of Transistors | -- | 1 | 1 | 2 |
| Packing | -- | SOT883_315 | SOT883_315 | SOT1118_115 |
| Action |
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