NXP Semiconductors PMST5551,115 BJTs
NPN high-voltage transistors
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMST5551,115
Detailed Description
NPN high-voltage transistors
Package
SOT-323
Lifecycle Status
Active
Datasheet
PMST5551,115 Datasheet
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Technical Specifications
NXP Semiconductors PMST5551,115 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
160 V
Collector Base Voltage Vcbo
180 V
Emitter Base Voltage Vebo
6 V
Collector Emitter Saturation Voltage
200 mV
Maximum Dc Collector Current
300 mA
Alternate Parts Comparison (PMST5551,115 vs PMST2907A,115 vs PMST2369,115 vs PBSS4140T,235)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-323 | SC-70-3 | SC-70-3 | SOT23-3 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | -- |
| Operating Temperature | - 65°C ~ + 150°C | -- | - 65°C ~ + 150°C | -- |
| Collector Base Voltage Vcbo | 180 V | -- | 40 V | -- |
| Collector Emitter Saturation Voltage | 200 mV | -- | 250 mV | -- |
| Collector Emitter Voltage Vceo Max | 160 V | -- | 15 V | -- |
| Configuration | Single | -- | Single | -- |
| Continuous Collector Current | 300 mA | -- | 200 mA | -- |
| Dc Collector Base Gain Hfe Min | 80 | -- | 40 | -- |
| Dc Current Gain Hfe Max | 80 at 1 mA, 5 V | -- | 40 at 10 mA, 1 V | -- |
| Emitter Base Voltage Vebo | 6 V | -- | 5 V | -- |
| Action |
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