NXP Semiconductors PHT8N06LT MOSFETs
TrenchMOS transistor Logic level FET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PHT8N06LT
Detailed Description
TrenchMOS transistor Logic level FET
Package
SOT-223
Lifecycle Status
Active
Datasheet
PHT8N06LT Datasheet
Quick Jump:
Technical Specifications
NXP Semiconductors PHT8N06LT MOSFETs technical specifications.
General
RoHS
Yes
Number of Pins
4
Source Content Uid
PHT8N06LT
Pbfree Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
Additional Feature
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Rating Eas
30 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Alternate Parts Comparison (PHT8N06LT vs PHT6NQ10T,135 vs PHT6N06LT vs PHT6N06T)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | SOT-223 | -- | SOT-223 | SOT223 |
| Number of Pins | 4 | 4 | -- | -- |
| Number of Elements | 1 | 1 | -- | -- |
| Terminal Position | DUAL | DUAL | -- | -- |
| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | -- | -- | -- |
| Avalanche Energy Rating Eas | 30 mJ | -- | -- | -- |
| Case Connection | DRAIN | -- | -- | -- |
| Configuration | SINGLE WITH BUILT-IN DIODE | -- | -- | -- |
| Drain Current Max ID | 2.2 A | -- | -- | -- |
| Drain Source on Resistance Max | 0.08 Ω | -- | -- | -- |
| Ds Breakdown Voltage Min | 55 V | -- | -- | -- |
| Action |
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