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NXP Semiconductors PDTD123ET,215 BJTs

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

296 ActiveNXP SemiconductorsSOT23-3$0.04
PDTD123ET,215 SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

PDTD123ET,215
Manufacturer
Part Number (MPN)
PDTD123ET,215
Detailed Description
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDF PDTD123ET,215 Datasheet
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Technical Specifications

NXP Semiconductors PDTD123ET,215 BJTs technical specifications.

General

RoHS
Yes
Type Number
PDTD123ET
Size Mm
2.9 x 1.3 x 1
Channel Type
NPN
Ptot Mw
250
R2 Typ K
2.2
IC Max Ma
500
R1 Typ K
2.2
Vceo V
50
Packing
SOT23_215

Alternate Parts Comparison (PDTD123ET,215 vs PDTD113ZT,215 vs PMBT3906,235 vs BC858B,215)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
Chemical ContentPDTD123ETPDTD113ZTPMBT3906BC858B
PackageSOT23-3SOT23-3SOT23-3SOT23-3
Ptot Mw250250250250
Type NumberPDTD123ETPDTD113ZTPMBT3906BC858B
IC Max Ma500---200-100
Automotive Qualified--NYY
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Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

Suggested replacements

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