NXP Semiconductors PDTD113ET,215 BJTs
Low VCEsat (BISS) transistors
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PDTD113ET,215
Detailed Description
Low VCEsat (BISS) transistors
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDTD113ET,215 Datasheet
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Technical Specifications
NXP Semiconductors PDTD113ET,215 BJTs technical specifications.
General
RoHS
Yes
Type Number
PDTD113ET
Size Mm
2.9 x 1.3 x 1
IO Max Ma
500
R1 Typ K
1
R2 Typ K
1
Channel Type
NPN
Ptot Mw
250
Vceo V
50
Packing
SOT23_215
Related Parts Comparison (PDTD113ET,215 vs PDTD113ZT,215 vs PMBT3906,235 vs BC858B,215)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Chemical Content | PDTD113ET | PDTD113ZT | PMBT3906 | BC858B |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Ptot Mw | 250 | 250 | 250 | 250 |
| Type Number | PDTD113ET | PDTD113ZT | PMBT3906 | BC858B |
| Automotive Qualified | -- | N | Y | Y |
| Action |
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