NXP Semiconductors PDTC123ET BJTs
TRANS PREBIAS NPN 250MW TO236AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PDTC123ET
Detailed Description
TRANS PREBIAS NPN 250MW TO236AB
Package
Reel - TR
Lifecycle Status
Active
Datasheet
PDTC123ET Datasheet
Quick Jump:
Technical Specifications
NXP Semiconductors PDTC123ET BJTs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Package / Case
Reel - TR
Mounting Type
SMD (SMT)
Operating Temperature
-65 °C ~ 150 °C
Lifecycle Status
Active
Collector Cut Off Current Max
1μA
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
150 mV
Collector Emitter Voltage Vceo
50 V
Alternate Parts Comparison (PDTC123ET vs PDTC143ZT vs PMBT2222A vs BC856AT)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Reel - TR | Reel - TR | Reel - TR | Reel - TR |
| Mounting Type | SMD (SMT) | SMD (SMT) | SMD (SMT) | SMD (SMT) |
| Lifecycle Status | Active | Active | Active | Obsolete(EOL) |
| Collector Cut Off Current Max | 1μA | 1μA | 10nA (ICBO) | 15nA (ICBO) |
| Max Vce Sat | 150mV @ 500μA, 10mA | 100mV @ 250μA, 5mA | 1V @ 50mA, 500mA | 400mV @ 5mA, 100mA |
| Maximum Current Collector | 100 mA | 100 mA | 600 mA | 100 mA |
| Maximum Power Dissipation | 250 mW | 250 mW | 250 mW | 150 mW |
| Transistor Polarity | NPN - Pre-Biased | NPN - Pre-Biased | NPN | PNP |
| Typical Gain Hfe Min | 30 @ 20mA, 5V | 100 @ 10mA, 5V | 100 @ 150mA, 10V | 125 @ 2mA, 5V |
| Vceo Maximum Collector Emitter Breakdown Voltage | 50 V | 50 V | 40 V | 65 V |
| Frequency Transition | -- | 230 MHz | 300 MHz | 100 MHz |
| Action |
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