NXP Semiconductors BC856AT BJTs
TRANS PNP 65V 0.1A SC-75
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC856AT
Detailed Description
TRANS PNP 65V 0.1A SC-75
Package
Reel - TR
Lifecycle Status
Obsolete(EOL)
Datasheet
BC856AT Datasheet
Quick Jump:
Technical Specifications
NXP Semiconductors BC856AT BJTs technical specifications.
General
Package / Case
Reel - TR
Mounting Type
SMD (SMT)
Lifecycle Status
Obsolete(EOL)
Application Field
Used in Audio, Signal Processing
Collector Cut Off Current Max
15nA (ICBO)
Frequency Transition
100 MHz
Max Vce Sat
400mV @ 5mA, 100mA
Maximum Current Collector
100 mA
Maximum Power Dissipation
150 mW
Temperature Range Operating
150°C (TJ)
Alternate Parts Comparison (BC856AT vs BC817W vs BC847BPN vs PDTC123ET)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Reel - TR | Reel - TR | Reel - TR | Reel - TR |
| Mounting Type | SMD (SMT) | SMD (SMT) | SMD (SMT) | SMD (SMT) |
| Lifecycle Status | Obsolete(EOL) | Active | Active | Active |
| Collector Cut Off Current Max | 15nA (ICBO) | 100nA (ICBO) | 15nA (ICBO) | 1μA |
| Max Vce Sat | 400mV @ 5mA, 100mA | 700mV @ 50mA, 500mA | 300mV @ 5mA, 100mA | 150mV @ 500μA, 10mA |
| Maximum Current Collector | 100 mA | 500 mA | 100 mA | 100 mA |
| Maximum Power Dissipation | 150 mW | 200 mW | 300 mW | 250 mW |
| Transistor Polarity | PNP | NPN | NPN, PNP | NPN - Pre-Biased |
| Typical Gain Hfe Min | 125 @ 2mA, 5V | 100 @ 100mA, 1V | 200 @ 2mA, 5V | 30 @ 20mA, 5V |
| Vceo Maximum Collector Emitter Breakdown Voltage | 65 V | 45 V | 45 V | 50 V |
| Frequency Transition | 100 MHz | 100 MHz | 100 MHz | -- |
| Temperature Range Operating | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -- |
| Action |
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