NXP Semiconductors PDTC115ET,215 BJTs
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PDTC115ET,215
Detailed Description
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDTC115ET,215 Datasheet
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Technical Specifications
NXP Semiconductors PDTC115ET,215 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
100 kOhms
Typical Resistor Ratio
1
Dc Collector Base Gain Hfe Min
80
Collector Emitter Voltage Vceo Max
50 V
Continuous Collector Current
20 mA
Alternate Parts Comparison (PDTC115ET,215 vs PDTC143TT,215 vs PBSS4140T,235 vs 2PB709ART,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Chemical Content | -- | PDTC143TT | PBSS4140T | 2PB709ART |
| IC Max Ma | -- | 100 | 1000 | -100 |
| Ptot Mw | -- | 250 | 300 | 250 |
| Type Number | -- | PDTC143TT | PBSS4140T | 2PB709ART |
| Action |
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