NXP Semiconductors BSH105,215 MOSFETs
MOSFET N-CH 20V 1.05A SOT23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSH105,215
Base Model
Detailed Description
MOSFET N-CH 20V 1.05A SOT23
Package
SOT-23-3
Lifecycle Status
Active
Datasheet
BSH105,215 Datasheet
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Technical Specifications
NXP Semiconductors BSH105,215 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1.05 A
Rds on Drain Source Resistance
200 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Threshold Voltage
400 mV
Alternate Parts Comparison (BSH105,215 vs BSH105 vs BSH105,215 vs BSH108)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| RoHS | Yes | Yes | Yes | -- |
| Package | SOT-23-3 | SOT23-3 | SOT-23-3 | -- |
| Number of Channels | 1 Channel | -- | 1 Channel | -- |
| Channel Mode | Enhancement | -- | Enhancement | -- |
| ID Continuous Drain Current | 1.05 A | -- | 1.05 A | -- |
| Maximum Operating Temperature C | + 150 | -- | + 150 | -- |
| Minimum Operating Temperature C | - 55 | -- | - 55 | -- |
| Pd Power Dissipation | 417 mW | -- | 417 mW | -- |
| Qg Gate Charge | 3.9 nC | -- | 3.9 nC | -- |
| Rds on Drain Source Resistance | 200 mOhms | -- | 200 mOhms | -- |
| Technology | Si | -- | Si | -- |
| Action |
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