NXP Semiconductors BLS3135-65,114 RF BJT
BLS3135-65,114 by NXP Semiconductors · RF BJT · SOT-422A
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BLS3135-65,114
Package
SOT-422A
Lifecycle Status
Obsolete
Datasheet
BLS3135-65,114 Datasheet
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Technical Specifications
NXP Semiconductors BLS3135-65,114 RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
75V
Frequency Transition
3.5GHz
Gain
7dB
Power Max
200W
Dc Current Gain Hfe Min IC Vce
40 @ 2A, 5V
Alternate Parts Comparison (BLS3135-65,114 vs BLS3135-20,114 vs BLS3135-10,114 vs BLS2731-10,114)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Chassis Mount | Surface Mount | Surface Mount | Chassis Mount |
| Operating Temperature | 200°C (TJ) | 200°C (TJ) | 200°C (TJ) | 200°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | 8A | 2A | 1.5A | 1.5 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 2A, 5V | 40 @ 1.5A, 5V | 40 @ 250mA, 5V | 40 @ 250mA, 5V |
| Frequency Transition | 3.5GHz | 3.5GHz | 3.5GHz | 3.1 GHz |
| Gain | 7dB | 8dB | 9dB | 10dB |
| Power Max | 200W | 80W | 34W | 145 W |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 75V | 75V | 75V | 75 V |
| Package / Case | -- | SOT-422A | SOT-445C | SOT-445C |
| Action |
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