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NXP Semiconductors BLS3135-20,114 RF BJT

BLS3135-20,114 by NXP Semiconductors · RF BJT · SOT-422A

In StockNXP SemiconductorsSOT-422A
BLS3135-20,114 SOT-422A package illustration

Same model may have multiple batches, images only for reference.

BLS3135-20,114
Manufacturer
Part Number (MPN)
BLS3135-20,114
Package
SOT-422A
Lifecycle Status
Obsolete
Datasheet
PDF BLS3135-20,114 Datasheet
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Technical Specifications

NXP Semiconductors BLS3135-20,114 RF BJT technical specifications.

General

Package / Case
SOT-422A
Mounting Type
Surface Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Power Max
80W
Transistor Type
NPN
Current Collector IC Max
2A
Voltage Collector Emitter Breakdown Max
75V
Dc Current Gain Hfe Min IC Vce
40 @ 1.5A, 5V
Frequency Transition
3.5GHz

Alternate Parts Comparison (BLS3135-20,114 vs BLS3135-65,114 vs BLS3135-50,114 vs BLS2731-10,114)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max2A8A6A1.5 A
Dc Current Gain Hfe Min IC Vce40 @ 1.5A, 5V40 @ 2A, 5V40 @ 1.5A, 5V40 @ 250mA, 5V
Frequency Transition3.5GHz3.5GHz3.5GHz3.1 GHz
Gain8dB7dB8dB10dB
Power Max80W200W80W145 W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max75V75V75V75 V
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