NTE Electronics, Inc. NTE55MCP RF BJT
NTE55MCP by NTE Electronics, Inc. · RF BJT · TO-220-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTE55MCP
Package
TO-220-3
Lifecycle Status
Active
Datasheet
NTE55MCP Datasheet
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Technical Specifications
NTE Electronics, Inc. NTE55MCP RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
150V
Frequency Transition
30MHz
Power Max
2W
Dc Current Gain Hfe Min IC Vce
40 @ 2A, 2V
Current Collector IC Max
8A
Alternate Parts Comparison (NTE55MCP vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) | -40 ~ 125 | 0 °C ~ 70 °C | 150°C (TJ) |
| RoHS | Yes | Compliant | Compliant | -- |
| Package | TO-220-3 | DIP | DIP | -- |
| Lifecycle Status | Active | Obsolete | -- | -- |
| Current Collector IC Max | 8A | -- | -- | 100mA |
| Dc Current Gain Hfe Min IC Vce | 40 @ 2A, 2V | -- | -- | 100 @ 10mA, 10V |
| Frequency Transition | 30MHz | -- | -- | 70MHz |
| Power Max | 2W | -- | -- | 1.5W |
| Transistor Type | PNP | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 150V | -- | -- | 300V |
| Memory Size | -- | 256K | 1 MB | -- |
| Action |
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