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NTE Electronics, Inc. NTE311 RF BJT

NTE311 by NTE Electronics, Inc. · RF BJT · TO-39

In Stock ActiveNTE Electronics, Inc.TO-39
NTE311 TO-39 package illustration

Same model may have multiple batches, images only for reference.

NTE311
Part Number (MPN)
NTE311
Package
TO-39
Lifecycle Status
Active
Datasheet
PDF NTE311 Datasheet
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Technical Specifications

NTE Electronics, Inc. NTE311 RF BJT technical specifications.

General

Package / Case
Bag
Mounting Type
Through Hole
Lifecycle Status
Active
Current Collector IC Max
400 mA
Dc Current Gain Hfe Min IC Vce
25 @ 50mA, 5V
Frequency Transition
800 MHz
Gain
10dB
Power Max
5 W
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
30 V

Related Parts Comparison (NTE311 vs NTE27C256-12D vs NTE27C256-15D vs NTE2501)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Package / CaseBag----TO-225AA, TO-126-3
Lifecycle StatusActiveObsolete----
Current Collector IC Max400 mA----100mA
Dc Current Gain Hfe Min IC Vce25 @ 50mA, 5V----100 @ 10mA, 10V
Frequency Transition800 MHz----70MHz
Power Max5 W----1.5W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max30 V----300V
Gain10dB------
Operating Temperature---40 ~ 1250 °C ~ 70 °C150°C (TJ)
Memory Size--256K1 MB--
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