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Nexperia PSMN8R0-40BS,118 MOSFETs

N-channel Power MOSFET, single element, enhancement mode.

In Stock ActiveNexperiaPSMN8R0D2PAKRoHS
PSMN8R0-40BS,118 - No Image Available

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PSMN8R0-40BS,118
Manufacturer
Part Number (MPN)
PSMN8R0-40BS,118
Base Model
Detailed Description
N-channel Power MOSFET, single element, enhancement mode. Features 40V drain-source voltage, 77A continuous drain current, and 7.6mOhm drain-source resistance at 10V. Packaged in a D2PAK surface-mount case with 3 pins (2+tab), offering a maximum power dissipation of 86000mW. Operates across a wide temperature range from -55°C to 175°C.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF PSMN8R0-40BS,118 Datasheet
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Ordering Code Family

PSMN8R0 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Nexperia PSMN8R0-40BS,118 MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)

Alternate Parts Comparison (PSMN8R0-40BS,118 vs PSMN8R0-80YLX vs PSMN8R0-40PS vs PSMN4R5-40BS,118)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface Mount--Through HoleSurface Mount
Operating Temperature-55°C ~ 175°C---55°C ~ 175°C-55°C ~ 175°C
Number of Pins3--33
RoHSYes with Exemption--Yes with ExemptionYes with Exemption
AEC QualifiedNo--NoNo
AutomotiveNo--NoNo
Cage CodeH2HX9--H2HX9H2HX9
CategoryPower MOSFET--Power MOSFETPower MOSFET
Channel ModeEnhancement--EnhancementEnhancement
Channel TypeN--NN
ConfigurationSingle--SingleSingle
Maximum Continuous Drain Current77A--77A100A
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Nexperia PSMN8R0-40BS,118 MOSFETs Overview

N-channel Power MOSFET, single element, enhancement mode. Features 40V drain-source voltage, 77A continuous drain current, and 7.6mOhm drain-source resistance at 10V. Packaged in a D2PAK surface-mount case with 3 pins (2+tab), offering a maximum power dissipation of 86000mW. Operates across a wide temperature range from -55°C to 175°C.

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