Nexperia PSMN5R6-100BS,118 MOSFETs
N-channel Power MOSFET, single element, enhancement mode, designed for surface mount applications.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN5R6-100BS,118
Base Model
Detailed Description
N-channel Power MOSFET, single element, enhancement mode, designed for surface mount applications. Features 100V drain-source voltage, 100A continuous drain current, and low 5.6mOhm drain-source resistance at 10V. Housed in a D2PAK package with 3 pins (2+Tab), offering a maximum power dissipation of 306W. Operates across a wide temperature range from -55°C to 175°C.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN5R6-100BS,118 Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN5R6-100BS,118 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)
Alternate Parts Comparison (PSMN5R6-100BS,118 vs PSMN5R6-60YLX vs PSMN5R6-100BS,118 vs PSMN5R6-100PS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | Through Hole |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -55°C ~ 175°C |
| Number of Pins | 3 | -- | -- | 3 |
| RoHS | Yes with Exemption | -- | -- | Yes with Exemption |
| AEC Qualified | No | -- | -- | No |
| Automotive | No | -- | -- | No |
| Cage Code | H2HX9 | -- | -- | H2HX9 |
| Category | Power MOSFET | -- | -- | Power MOSFET |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Channel Type | N | -- | -- | N |
| Configuration | Single | -- | -- | Single |
| Maximum Continuous Drain Current | 100A | -- | -- | 100A |
| Action |
Nexperia PSMN5R6-100BS,118 MOSFETs Overview
N-channel Power MOSFET, single element, enhancement mode, designed for surface mount applications. Features 100V drain-source voltage, 100A continuous drain current, and low 5.6mOhm drain-source resistance at 10V. Housed in a D2PAK package with 3 pins (2+Tab), offering a maximum power dissipation of 306W. Operates across a wide temperature range from -55°C to 175°C.
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