Nexperia PSMN2R8-40BS,118 MOSFETs
N-channel Power MOSFET, single element, enhancement mode, 40V drain-source voltage, 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN2R8-40BS,118 MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN2R8-40BS,118 vs PSMN2R8-40YSDX vs PSMN4R5-40BS,118 vs PSMN034-100BS,118)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | -- | 3 | 3 |
| RoHS | Yes with Exemption | -- | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | -- | -- | -- | -- |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single | -- | Single | Single |
| Maximum Continuous Drain Current | 100A | -- | 100A | 32A |
| Action |
Nexperia PSMN2R8-40BS,118 MOSFETs Overview
N-channel Power MOSFET, single element, enhancement mode, 40V drain-source voltage, 100A continuous drain current. Features 2.9 mOhm maximum drain-source resistance at 10V, 71 nC typical gate charge at 10V, and 4491 pF typical input capacitance at 20V. Housed in a 3-pin D2PAK surface-mount package with dimensions of 10.3mm (L) x 9.4mm (W) x 4.5mm (H) max.
Operates from -55°C to 175°C with a maximum power dissipation of 211000 mW.
More Parts in MOSFETs
PSMN2R8-40YSDXNexperiaBUK762R9-40E,118Nexperia