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Nexperia BUK969R0-60E MOSFETs

N-channel power MOSFET, surface mountable in a D2PAK package with 3 pins (2+Tab).

In Stock ActiveNexperiaD2PAKRoHS
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BUK969R0-60E
Manufacturer
Part Number (MPN)
BUK969R0-60E
Detailed Description
N-channel power MOSFET, surface mountable in a D2PAK package with 3 pins (2+Tab). Features a maximum drain-source voltage of 60V and a continuous drain current of 75A. Operates with a maximum gate-source voltage of 10V and a gate threshold voltage of 2.1V. Offers a low drain-source on-resistance of 8mΩ at 10V. This single-element MOSFET utilizes TMOS process technology and supports a wide operating temperature range from -55°C to 175°C.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF BUK969R0-60E Datasheet
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Technical Specifications

Nexperia BUK969R0-60E MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)

Alternate Parts Comparison (BUK969R0-60E vs BUK762R9-40E,118 vs BUK761R7-40E,118 vs BUK762R6-60E,118)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3333
RoHSYes with ExemptionYes with ExemptionYes with ExemptionYes with Exemption
AEC QualifiedYesYesYesYes
AutomotiveYesYesYesYes
Cage CodeH2HX9H2HX9H2HX9H2HX9
Category--------
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingleSingle
Maximum Continuous Drain Current75A100A120A120A
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Nexperia BUK969R0-60E MOSFETs Overview

N-channel power MOSFET, surface mountable in a D2PAK package with 3 pins (2+Tab). Features a maximum drain-source voltage of 60V and a continuous drain current of 75A. Operates with a maximum gate-source voltage of 10V and a gate threshold voltage of 2.1V. Offers a low drain-source on-resistance of 8mΩ at 10V.

This single-element MOSFET utilizes TMOS process technology and supports a wide operating temperature range from -55°C to 175°C.

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