Nexperia BUK962R8-60E MOSFETs
N-channel Power MOSFET, 60V drain-source voltage, 120A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK962R8-60E
Base Model
Detailed Description
N-channel Power MOSFET, 60V drain-source voltage, 120A continuous drain current. Features 2.5mOhm maximum drain-source resistance at 10V, 96nC typical gate charge at 5V, and 11701pF typical input capacitance at 25V. Surface mountable in a D2PAK package with 3 pins (2+Tab), this single-element component utilizes TMOS process technology. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 324000mW.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
BUK962R8-60E Datasheet
Quick Jump:
Technical Specifications
Nexperia BUK962R8-60E MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)
Alternate Parts Comparison (BUK962R8-60E vs BUK962R5-60E,118 vs BUK962R8-60E,118 vs BUK962R1-40E,118)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | -- | 3 | 3 |
| RoHS | Yes with Exemption | -- | Yes with Exemption | Yes with Exemption |
| AEC Qualified | Yes | -- | Yes | Yes |
| Automotive | Yes | -- | Yes | Yes |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | -- | -- | -- | -- |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single | -- | Single | Single |
| Maximum Continuous Drain Current | 120A | -- | 120A | 120A |
| Action |
Nexperia BUK962R8-60E MOSFETs Overview
N-channel Power MOSFET, 60V drain-source voltage, 120A continuous drain current. Features 2.5mOhm maximum drain-source resistance at 10V, 96nC typical gate charge at 5V, and 11701pF typical input capacitance at 25V. Surface mountable in a D2PAK package with 3 pins (2+Tab), this single-element component utilizes TMOS process technology.
Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 324000mW.
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