Nexperia BUK961R7-40E,118 MOSFETs
Automotive N-channel enhancement mode power MOSFET in a D2PAK surface-mount package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK961R7-40E,118
Detailed Description
Automotive N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 40V drain-source voltage, 120A continuous drain current, and low 1.5mΩ drain-source on-resistance at 10V. This single-element TMOS process technology component offers a maximum gate-source voltage of 10V and operates across a wide temperature range from -55°C to 175°C. The 3-pin D2PAK package includes a tab for enhanced thermal performance.
Package
D2PAK
Key Features
Package: D2PAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
BUK961R7-40E,118 Datasheet
Quick Jump:
Technical Specifications
Nexperia BUK961R7-40E,118 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
D2PAK
Pcb
2
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
9.4(Max)
Package Height Mm
4.5(Max)
Alternate Parts Comparison (BUK961R7-40E,118 vs BUK762R9-40E,118 vs BUK761R7-40E,118 vs BUK762R6-60E,118)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | -- | -- | -- | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Maximum Continuous Drain Current | 120A | 100A | 120A | 120A |
| Action |
Nexperia BUK961R7-40E,118 MOSFETs Overview
Automotive N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 40V drain-source voltage, 120A continuous drain current, and low 1.5mΩ drain-source on-resistance at 10V. This single-element TMOS process technology component offers a maximum gate-source voltage of 10V and operates across a wide temperature range from -55°C to 175°C.
The 3-pin D2PAK package includes a tab for enhanced thermal performance.
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