Nexperia BUK763R1-60E MOSFETs
N-channel enhancement mode power MOSFET in a D2PAK package, designed for automotive applications.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia BUK763R1-60E MOSFETs technical specifications.
General
Related Parts Comparison (BUK763R1-60E vs BUK763R1-60E,118 vs BUK763R9-60E vs BUK763R9-60E,118)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | Yes | Yes | Yes | Yes |
| Automotive | Yes | Yes | Yes | Yes |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Maximum Continuous Drain Current | 120A | 120A | 100A | 100A |
| Maximum Drain Source Resistance | 3.1@10VmOhm | 3.1@10VmOhm | 3.9@10VmOhm | 3.9@10VmOhm |
| Action |
Nexperia BUK763R1-60E MOSFETs Overview
N-channel enhancement mode power MOSFET in a D2PAK package, designed for automotive applications. Features a 60V drain-source voltage, 120A continuous drain current, and low 3.1mOhm drain-source resistance at 10V. Surface mountable with 3 pins (2+tab), it offers a maximum power dissipation of 293000mW and operates across a wide temperature range from -55°C to 175°C.
Utilizes TMOS process technology for robust performance.