Nexperia BSP250,115 MOSFETs
P-Channel MOSFET, 4-Pin, D-MOS FET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSP250,115
Detailed Description
P-Channel MOSFET, 4-Pin, D-MOS FET
Package
SOT-223-3
Lifecycle Status
Active
Datasheet
BSP250,115 Datasheet
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Technical Specifications
Nexperia BSP250,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
3 A
Rds on Drain Source Resistance
330 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
2.8 V
Alternate Parts Comparison (BSP250,115 vs BSP220 vs BSP225 vs BSP126,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| ID Continuous Drain Current | 3 A | -- | -- | -- |
| Maximum Operating Temperature C | + 150 | -- | -- | -- |
| Minimum Operating Temperature C | - 65 | -- | -- | -- |
| Package | SOT-223-3 | -- | -- | -- |
| Pd Power Dissipation | 5 W | -- | -- | -- |
| Qg Gate Charge | 10 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 330 mOhms | -- | -- | -- |
| Technology | Si | -- | -- | -- |
| Action |
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