Nexperia BSP225,115 MOSFETs
BSP225 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSP225,115
Base Model
Detailed Description
BSP225 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin
Package
SOT-223-3
Lifecycle Status
Active
Datasheet
BSP225,115 Datasheet
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Technical Specifications
Nexperia BSP225,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
250 V
ID Continuous Drain Current
225 mA
Rds on Drain Source Resistance
10 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (BSP225,115 vs BSP225 vs BSP220 vs BSP126,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 65°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| ID Continuous Drain Current | 225 mA | -- | -- | -- |
| Package | SOT-223-3 | -- | -- | -- |
| Part Aliases | 934000510115 | -- | -- | -- |
| Pd Power Dissipation | 1.5 W | -- | -- | -- |
| Rds on Drain Source Resistance | 10 Ohms | -- | -- | -- |
| Technology | Si | -- | -- | -- |
| Transistor Polarity | P-Channel | -- | -- | -- |
| Action |
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