Nexperia BSH205G2R Transistors
P-channel Trench MOSFET, 20 V drain-source voltage, housed in a TO-236AB package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSH205G2R
Category
Base Model
Detailed Description
P-channel Trench MOSFET, 20 V drain-source voltage, housed in a TO-236AB package. This discrete semiconductor features 3 terminals with a dual terminal position and a single element. Designed for efficient switching applications.
Lifecycle Status
Active
Datasheet
BSH205G2R Datasheet
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Technical Specifications
Nexperia BSH205G2R Transistors technical specifications.
General
Number of Pins
3
Terminal Position
DUAL
Jedec Package Code
TO-236AB
Number of Elements
1
Military Spec
False
Alternate Parts Comparison (BSH205G2R vs BSH205G2AR vs BSH205G2 vs BSH103,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Number of Pins | 3 | -- | 3 | -- |
| Jedec Package Code | TO-236AB | -- | TO-236AB | -- |
| Military Spec | False | -- | False | -- |
| Number of Elements | 1 | -- | 1 | -- |
| Terminal Position | DUAL | -- | DUAL | -- |
| Action |
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