Microchip Technology TP0610T-G MOSFETs
MOSFET P-CH 60V 120MA TO236AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TP0610T-G
Detailed Description
MOSFET P-CH 60V 120MA TO236AB
Package
SOT23-3
Lifecycle Status
Active
Datasheet
TP0610T-G Datasheet
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Technical Specifications
Microchip Technology TP0610T-G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
120 mA
Rds on Drain Source Resistance
10 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
1 V
Alternate Parts Comparison (TP0610T-G vs TPFLXIC005 vs TPFLXIC007 vs TPFLXIC013)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Number of Channels | 1 Channel | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 20 ns | -- | -- | -- |
| Forward Transconductance Min | 60 mS | -- | -- | -- |
| ID Continuous Drain Current | 120 mA | -- | -- | -- |
| Maximum Operating Temperature C | + 150 | -- | -- | -- |
| Minimum Operating Temperature C | - 55 | -- | -- | -- |
| Package | SOT23-3 | -- | -- | -- |
| Pd Power Dissipation | 360 mW | -- | -- | -- |
| Action |
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