Microchip Technology LND01K1-G MOSFETs
MOSFET N-CH 9V 330MA SOT23-5
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
LND01K1-G
Detailed Description
MOSFET N-CH 9V 330MA SOT23-5
Package
SOT-23-5
Lifecycle Status
Active
Datasheet
LND01K1-G Datasheet
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Technical Specifications
Microchip Technology LND01K1-G MOSFETs technical specifications.
General
Series
LND01
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 25°C ~ + 125°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
9 V
ID Continuous Drain Current
330 mA
Rds on Drain Source Resistance
1.4 Ohms
Related Parts Comparison (LND01K1-G vs LND250K1-G vs LND150N8-G vs LND150K1-G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Yes |
| Channel Mode | Depletion | Depletion | Depletion | Depletion |
| Configuration | Single | Single | Single Dual Drain | Single |
| Fall Time | 6.4 ns | 450 ns | 1.3 us | 1.3 us |
| Package | SOT-23-5 | Tape & Reel (TR) | Tape & Reel (TR) | SOT23-3 |
| Pd Power Dissipation | 360 mW | 360 mW | 1.6 W | 360 mW |
| Rds on Drain Source Resistance | 1.4 Ohms | 1 kOhms | 1 kOhms | 1 kOhms |
| Rise Time | 11 ns | 450 ns | 0.45 us | 0.45 us |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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