Microchip Technology 2N3507A BJTs
NPN POWER SILICON TRANSISTORS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N3507A
Detailed Description
NPN POWER SILICON TRANSISTORS
Package
TO-205AD,TO-39-3MetalCan
Lifecycle Status
Active
Datasheet
2N3507A Datasheet
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Technical Specifications
Microchip Technology 2N3507A BJTs technical specifications.
General
RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Transistor Type
NPN
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
50 V
Vce Saturation Max Ib IC
500mV @ 50mA, 500mA
Current Collector Cutoff Max
1µA
Dc Current Gain Hfe Min IC Vce
30 @ 1.5A, 2V
Related Parts Comparison (2N3507A vs 0402N910J500CT vs JANTXV2N3486A vs 2N4233A)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Non-Compliant | Yes | Not Compliant |
| Mounting Type | Through Hole | -- | -- | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) | -- | -- | -65 °C ~ 200 °C |
| Lifecycle Status | Active | -- | -- | Active |
| Package | TO-205AD,TO-39-3MetalCan | -- | TO-46-3 | -- |
| Current Collector Cutoff Max | 1µA | -- | -- | -- |
| Current Collector IC Max | 3 A | -- | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 30 @ 1.5A, 2V | -- | -- | -- |
| Power Max | 1 W | -- | -- | -- |
| Transistor Type | NPN | -- | -- | -- |
| Vce Saturation Max Ib IC | 500mV @ 50mA, 500mA | -- | -- | -- |
| Voltage Collector Emitter Breakdown Max | 50 V | -- | -- | -- |
| Action |
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