Microchip Technology 2N2219AE3 BJTs
TRANS NPN 30V 0.8A TO39
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N2219AE3
Detailed Description
TRANS NPN 30V 0.8A TO39
Package
TO-39-3
Lifecycle Status
Active
Datasheet
2N2219AE3 Datasheet
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Technical Specifications
Microchip Technology 2N2219AE3 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 200°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
50 V
Collector Base Voltage Vcbo
75 V
Emitter Base Voltage Vebo
6 V
Collector Emitter Saturation Voltage
300 mV
Maximum Dc Collector Current
800 mA
Alternate Parts Comparison (2N2219AE3 vs 0402N910J500CT vs JANTXV2N3486A vs 2N3766)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Non-Compliant | Yes | Not Compliant |
| Mounting Type | Through Hole | -- | -- | Through Hole |
| Operating Temperature | - 55°C ~ + 200°C | -- | -- | -65°C ~ 200°C (TJ) |
| Configuration | Single | -- | -- | Single |
| Package | TO-39-3 | -- | TO-46-3 | -- |
| Technology | Si | -- | Si | -- |
| Collector Base Voltage Vcbo | 75 V | -- | -- | -- |
| Collector Emitter Saturation Voltage | 300 mV | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 50 V | -- | -- | -- |
| Dc Collector Base Gain Hfe Min | 50 at 100 uA, 10 V | -- | -- | -- |
| Dc Current Gain Hfe Max | 325 at 1 mA, 10 V | -- | -- | -- |
| Emitter Base Voltage Vebo | 6 V | -- | -- | -- |
| Action |
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