Infineon Technologies SPB80P06PG MOSFETs
MOSFET P-CH 60V 80A TO263-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SPB80P06PG
Detailed Description
MOSFET P-CH 60V 80A TO263-3
Package
TO263
Lifecycle Status
Active
Datasheet
SPB80P06PG Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies SPB80P06PG MOSFETs technical specifications.
General
RoHS
Yes
Idpuls Max
-320.0 A
Ptot Max
375.0 W
Vds Max
-60.0 V
IC Max
-80.0 A
Rds on Max
23.0 mΩ
Polarity
P
Operating Temperature Min
-55.0 °C
Operating Temperature Max
175.0 °C
Package
TO263
Alternate Parts Comparison (SPB80P06PG vs SPB20N60C3ATMA1 vs SPB21N50C3 vs SPB18P06PGATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | ROHS3 Compliant | RoHS Compliant By Exemption | Compliant with Exemption |
| Rds on Max | 23.0 mΩ | 190mO | -- | 130mO |
| Series | -- | CoolMOS™ C3 | CoolMOS C3 | SIPMOS® |
| Package / Case | -- | TO-263-3, D2PAK | D2PAK-3 | TO-263-3, D2PAK |
| Mounting Type | -- | Surface Mount | SMD/SMT | Surface Mount |
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | -55°C ~ 175°C (TJ) |
| Number of Pins | -- | 3 | 4 | 3 |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 4.5 ns | 4.5 ns | 11 ns |
| Rise Time | -- | 5 ns | 5 ns | 5.8 ns |
| Technology | -- | MOSFET (Metal Oxide) | Si | MOSFET (Metal Oxide) |
| Action |
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