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Infineon Technologies SPB18P06PGATMA1 MOSFETs

MOSFET P-CH 60V 18.7A D2PAK

12,000 ActiveInfineon TechnologiesTO-263-3, D2PAK (2 Leads + Tab), TO-263AB$1.50
SPB18P06PGATMA1 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package illustration

Same model may have multiple batches, images only for reference.

SPB18P06PGATMA1
Part Number (MPN)
SPB18P06PGATMA1
Detailed Description
MOSFET P-CH 60V 18.7A D2PAK
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
PDF SPB18P06PGATMA1 Datasheet
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Technical Specifications

Infineon Technologies SPB18P06PGATMA1 MOSFETs technical specifications.

General

Series
SIPMOS®
RoHS
Compliant with Exemption
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Automotive
Yes
Channel Mode
Enhancement

Alternate Parts Comparison (SPB18P06PGATMA1 vs SPB20N60C3ATMA1 vs IRFS4020PBF vs IRLZ24NS)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSCompliant with ExemptionROHS3 CompliantROHS3 CompliantRoHS non-compliant
Lifecycle StatusActiveActiveObsoleteObsolete
Current Continuous Drain ID 25 C18.7A (Ta)20.7A (Tc)18A (Tc)18A (Tc)
Drain to Source Voltage Vdss60 V600 V200 V55 V
Drive Voltage Max Rds on Min Rds on10 V10 V10 V4V, 10V
Fet TypeP-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs28 nC @ 10 V114 nC @ 10 V29 nC @ 10 V15 nC @ 5 V
Input Capacitance Ciss Max Vds860 pF @ 25 V2400 pF @ 25 V1200 pF @ 50 V480 pF @ 25 V
Moisture Sensitivity Level MSL1 (Unlimited)1 (Unlimited)1 (Unlimited)1 (Unlimited)
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