Infineon Technologies SMBT3906DW1T1G BJTs
Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMBT3906DW1T1G
Detailed Description
Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors
Package
SOT-363-6
Lifecycle Status
Active
Datasheet
SMBT3906DW1T1G Datasheet
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Technical Specifications
Infineon Technologies SMBT3906DW1T1G BJTs technical specifications.
General
RoHS
Yes
Number of Pins
6
Package / Case
SOT-363-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
-40 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
-250 mV
Collector Emitter Voltage Vceo
40 V
Alternate Parts Comparison (SMBT3906DW1T1G vs SMBT2222AE6327HTSA1 vs SMBT3904DW1T1G vs BC846BLT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | True | Yes | True |
| Lifecycle Status | Active | -- | Active | Active |
| Package | -- | SOT23-3 | -- | SOT-23-3 |
| Action |
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