Infineon Technologies SMBT3904DW1T1G BJTs
Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMBT3904DW1T1G
Detailed Description
Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors
Package
SOT-363-6
Lifecycle Status
Active
Datasheet
SMBT3904DW1T1G Datasheet
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Technical Specifications
Infineon Technologies SMBT3904DW1T1G BJTs technical specifications.
General
RoHS
Yes
Number of Pins
6
Package / Case
SOT-363-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
60 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage Vceo
40 V
Related Parts Comparison (SMBT3904DW1T1G vs SMBT2222AE6327HTSA1 vs SMBT3906DW1T1G vs BC846BLT3G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | discontinued | Active | Active |
| Package / Case | SOT-363-6 | -- | SOT-363-6 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Current Collector IC Max | 200 mA | -- | 200 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 10mA, 1V | -- | 100 @ 10mA, 1V | 200 @ 2mA, 5V |
| Frequency Transition | 300 MHz | -- | 250 MHz | 100MHz |
| Lead Free | Lead Free | Yes | Lead Free | -- |
| Polarity | NPN | -- | PNP | NPN |
| Power Max | 150 mW | -- | 150 mW | 300 mW |
| Transistor Type | 2 NPN (Dual) | -- | 2 PNP (Dual) | NPN |
| Action |
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