Infineon Technologies IRF5810TRPBF MOSFETs
MOSFET 2P-CH 20V 2.9A 6TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF5810TRPBF
Detailed Description
MOSFET 2P-CH 20V 2.9A 6TSOP
Package
TSOP-6
Lifecycle Status
Active
Datasheet
IRF5810TRPBF Datasheet
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Technical Specifications
Infineon Technologies IRF5810TRPBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
2.9 A
Vgs Gate Source Voltage
- 12 V, + 12 V
Qg Gate Charge
6.4 nC
Pd Power Dissipation
960 mW
Alternate Parts Comparison (IRF5810TRPBF vs IRF5802TR vs IRF5803TRPBF vs IRF5802TRPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOP-6 | TSOP-6 | TSOP-6 | TSOP-6 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| ID Continuous Drain Current | 2.9 A | -- | -- | -- |
| Moisture Sensitive | Yes | -- | -- | -- |
| Pd Power Dissipation | 960 mW | -- | -- | -- |
| Qg Gate Charge | 6.4 nC | -- | -- | -- |
| Technology | Si | -- | -- | -- |
| Transistor Polarity | P-Channel | -- | -- | -- |
| Transistor Type | 2 P-Channel | -- | -- | -- |
| Action |
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