Infineon Technologies IRF5802TR MOSFETs
MOSFET N-CH 150V 0.9A 6-TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF5802TR
Detailed Description
MOSFET N-CH 150V 0.9A 6-TSOP
Package
TSOP-6
Lifecycle Status
Active
Datasheet
IRF5802TR Datasheet
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Technical Specifications
Infineon Technologies IRF5802TR MOSFETs technical specifications.
General
RoHS
Yes
Feature Process Technology
HEXFET
Feature Configuration
Single Quad Drain
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
150
Feature Maximum Gate Source Voltage V
±30
Feature Maximum Gate Threshold Voltage V
5.5
Feature Maximum Continuous Drain Current a
0.9
Alternate Parts Comparison (IRF5802TR vs IRF5810TRPBF vs IRF5803TRPBF vs IRF5802TRPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOP-6 | TSOP-6 | TSOP-6 | TSOP-6 |
| Feature AEC Qualified | No | -- | -- | -- |
| Feature Auto Motive | No | -- | -- | -- |
| Feature Cecc Qualified | No | -- | -- | -- |
| Feature Channel Mode | Enhancement | -- | -- | -- |
| Feature Channel Type | N | -- | -- | -- |
| Feature Configuration | Single Quad Drain | -- | -- | -- |
| Feature Maximum Continuous Drain Current a | 0.9 | -- | -- | -- |
| Feature Maximum Drain Source Resistance Mohm | 1200@10V | -- | -- | -- |
| Feature Maximum Drain Source Voltage V | 150 | -- | -- | -- |
| Feature Maximum Gate Source Voltage V | ±30 | -- | -- | -- |
| Action |
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