Infineon Technologies IPD75N04S4-06 MOSFETs
MOSFETs N-Ch 40V 75A DPAK-2 OptiMOS-T2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD75N04S4-06
Detailed Description
MOSFETs N-Ch 40V 75A DPAK-2 OptiMOS-T2
Package
DPAK-3 (TO-252-3)
Lifecycle Status
Active
Datasheet
IPD75N04S4-06 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD75N04S4-06 MOSFETs technical specifications.
General
Series
OptiMOS-T2
Number of Channels
1 Channel
Package / Case
DPAK-3
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
ID Max
75.0 A
Alternate Parts Comparison (IPD75N04S4-06 vs IPD380P06NMATMA1 vs IPD031N06L3GATMA1 vs IPD60R650CEAUMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | OptiMOS-T2 | OptiMOS™ | OptiMOS™ | CoolMOS™ CE |
| Package / Case | DPAK-3 | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 150°C (TJ) |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| Lifecycle Status | Active | Active | Active | Active |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Pd Power Dissipation | 58 W | 125 W | 167 W | 82 W |
| Qg Gate Charge | 32 nC | 63 nC | 79 nC | 20.5 nC |
| Rds on Drain Source Resistance | 5.9 mOhms | 38 mOhms | 2.5 mOhms | 540 mOhms |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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