Infineon Technologies IPD70P04P4-09 MOSFETs
MOSFETs P-Ch -40V -73A DPAK-2 OptiMOS-P2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD70P04P4-09
Detailed Description
MOSFETs P-Ch -40V -73A DPAK-2 OptiMOS-P2
Package
DPAK-3 (TO-252-3)
Lifecycle Status
Active
Datasheet
IPD70P04P4-09 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD70P04P4-09 MOSFETs technical specifications.
General
Series
OptiMOS-P2
RoHS
RoHS Compliant
Number of Pins
3
Number of Channels
1 Channel
Package / Case
DPAK-3
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
-55 °C ~ 175 °C
Channel Mode
Enhancement
Configuration
Single
Alternate Parts Comparison (IPD70P04P4-09 vs IPD75N04S4-06 vs IPD90N10S4L-06 vs IPD380P06NMATMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | OptiMOS-P2 | OptiMOS-T2 | XPD90N10 | OptiMOS™ |
| Package / Case | DPAK-3 | DPAK-3 | DPAK-3 | TO-252-3, DPAK |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Surface Mount |
| Operating Temperature | -55 °C ~ 175 °C | - 55°C ~ + 175°C | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Pd Power Dissipation | 75 W | 58 W | 136 W | 125 W |
| Qg Gate Charge | 54 nC | 32 nC | 75 nC | 63 nC |
| Rds on Drain Source Resistance | 8.9 mOhms | 5.9 mOhms | 6.6 mOhms | 38 mOhms |
| Technology | Si | Si | Si | MOSFET (Metal Oxide) |
| Transistor Polarity | P-Channel | N-Channel | N-Channel | P-Channel |
| Action |
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