Infineon Technologies IPD65R600E6 MOSFETs
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 650V 7.3A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD65R600E6
Base Model
Detailed Description
Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 650V 7.3A TO252-3
Package
TO-252-3,DPak(2Leads+Tab),SC-63
Lifecycle Status
Active
Datasheet
IPD65R600E6 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD65R600E6 MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMT
Vds Max
650.0 V
Ptot Max
63.0 W
Idpuls Max
18.0 A
Vgs Th Max
3.5 V
Vgs Th Min
2.5 V
Rthjc Max
2.0 K/W
Rthja Max
62.0 K/W
Operating Temperature Min
-55.0 °C
Alternate Parts Comparison (IPD65R600E6 vs IPD65R190C7ATMA1 vs IPD65R400CE vs IPD65R660CFDA)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252-3,DPak(2Leads+Tab),SC-63 | TO-252-3,DPAK(2Leads+Tab),SC-63 | TO-252-3 | TO-252-3 |
| Mounting Type | SMT | -- | SMT | SMT |
| Idpuls Max | 18.0 A | -- | 30.0 A | 17.0 A |
| Operating Temperature Min | -55.0 °C | -- | -55.0 °C | -55.0 °C |
| Polarity | N | -- | N | N |
| Ptot Max | 63.0 W | -- | 118.0 W | 62.5 W |
| Rds on Max | 600.0 mΩ | -- | 400.0 mΩ | 660.0 mΩ |
| Rthja Max | 62.0 K/W | -- | 62.0 K/W | 62.0 K/W |
| Rthjc Max | 2.0 K/W | -- | 1.06 K/W | 2.0 K/W |
| Vds Max | 650.0 V | -- | 650.0 V | 650.0 V |
| Vgs Th Max | 3.5 V | -- | 3.5 V | 4.5 V |
| Action |
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