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Infineon Technologies IPD35N10S3L-26 MOSFETs

MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T

25,000 ActiveInfineon TechnologiesTO-252-3,DPak(2Leads+Tab),SC-63$1.42
IPD35N10S3L-26 TO-252-3,DPak(2Leads+Tab),SC-63 package illustration

Same model may have multiple batches, images only for reference.

IPD35N10S3L-26
Part Number (MPN)
IPD35N10S3L-26
Detailed Description
MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T
Package
TO-252-3,DPak(2Leads+Tab),SC-63
Lifecycle Status
Active
Datasheet
PDF IPD35N10S3L-26 Datasheet
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Technical Specifications

Infineon Technologies IPD35N10S3L-26 MOSFETs technical specifications.

General

RoHS
Yes
Idpuls Max
140.0 A
Rthjc Max
2.1 K/W
Ptot Max
71.0 W
Vds Max
100.0 V
Qualification
Automotive
Qg Max
30.0 nC
Vgs Th Max
2.4 V
Polarity
N
IC Max
35.0 A

Related Parts Comparison (IPD35N10S3L-26 vs IPD80R4K5P7 vs IPD80R900P7 vs IPD90N03S4L03ATMA1)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageTO-252-3,DPak(2Leads+Tab),SC-63TO-252TO-252PG-TO252-3
IC Max35.0 A1.5 A6.0 A--
Idpuls Max140.0 A2.6 A14.0 A--
Operating Temperature Max175.0 °C150.0 °C150.0 °C--
Operating Temperature Min-55.0 °C-55.0 °C-55.0 °C--
PolarityNNN--
Ptot Max71.0 W13.0 W45.0 W--
Rds on Max24.0 mΩ4500.0 mΩ900.0 mΩ--
Rthjc Max2.1 K/W9.4 K/W2.8 K/W--
Vds Max100.0 V800.0 V800.0 V--
Vgs Th Max2.4 V3.5 V3.5 V--
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