Infineon Technologies IPD35N10S3L-26 MOSFETs
MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD35N10S3L-26
Detailed Description
MOSFETs N-Ch 100V 35A DPAK-2 OptiMOS-T
Package
TO-252-3,DPak(2Leads+Tab),SC-63
Lifecycle Status
Active
Datasheet
IPD35N10S3L-26 Datasheet
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Technical Specifications
Infineon Technologies IPD35N10S3L-26 MOSFETs technical specifications.
General
RoHS
Yes
Idpuls Max
140.0 A
Rthjc Max
2.1 K/W
Ptot Max
71.0 W
Vds Max
100.0 V
Qualification
Automotive
Qg Max
30.0 nC
Vgs Th Max
2.4 V
Polarity
N
IC Max
35.0 A
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Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252-3,DPak(2Leads+Tab),SC-63 | TO-252 | TO-252 | PG-TO252-3 |
| IC Max | 35.0 A | 1.5 A | 6.0 A | -- |
| Idpuls Max | 140.0 A | 2.6 A | 14.0 A | -- |
| Operating Temperature Max | 175.0 °C | 150.0 °C | 150.0 °C | -- |
| Operating Temperature Min | -55.0 °C | -55.0 °C | -55.0 °C | -- |
| Polarity | N | N | N | -- |
| Ptot Max | 71.0 W | 13.0 W | 45.0 W | -- |
| Rds on Max | 24.0 mΩ | 4500.0 mΩ | 900.0 mΩ | -- |
| Rthjc Max | 2.1 K/W | 9.4 K/W | 2.8 K/W | -- |
| Vds Max | 100.0 V | 800.0 V | 800.0 V | -- |
| Vgs Th Max | 2.4 V | 3.5 V | 3.5 V | -- |
| Action |
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