Infineon Technologies IPD60N10S4L12ATMA1 MOSFETs
MOSFET N-CH 100V 60A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD60N10S4L12ATMA1
Detailed Description
MOSFET N-CH 100V 60A TO252-3
Package
TO-252-3,DPAK(2Leads+Tab),SC-63
Lifecycle Status
Active
Datasheet
IPD60N10S4L12ATMA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IPD60N10S4L12ATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Packaging
TAPE & REEL
Lifecycle Status
active and preferred
Halogen Free
Yes
Lead Free
Yes
Dry Pack
NON DRY
Completely Lead Free
No
Package
TO-252-3,DPAK(2Leads+Tab),SC-63
Alternate Parts Comparison (IPD60N10S4L12ATMA1 vs IPD35N10S3L-26 vs IPD50N04S4-08 vs IPD60R750E6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252-3,DPAK(2Leads+Tab),SC-63 | TO-252-3,DPak(2Leads+Tab),SC-63 | TO-252-3,DPak(2Leads+Tab),SC-63 | TO-252-3,DPak(2Leads+Tab),SC-63 |
| IC Max | -- | 35.0 A | 50.0 A | 5.7 A |
| Idpuls Max | -- | 140.0 A | 200.0 A | 15.7 A |
| Operating Temperature Min | -- | -55.0 °C | -55.0 °C | -55.0 °C |
| Polarity | -- | N | N | N |
| Ptot Max | -- | 71.0 W | 46.0 W | 48.0 W |
| Rds on Max | -- | 24.0 mΩ | 7.9 mΩ | 750.0 mΩ |
| Rthjc Max | -- | 2.1 K/W | 3.3 K/W | 2.6 K/W |
| Vds Max | -- | 100.0 V | 40.0 V | 600.0 V |
| Vgs Th Max | -- | 2.4 V | 4.0 V | 3.5 V |
| Vgs Th Min | -- | 1.2 V | 2.0 V | 2.5 V |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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