Infineon Technologies IPD50R399CP MOSFETs
MOSFET N-CH 500V 9A TO252-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPD50R399CP
Base Model
Detailed Description
MOSFET N-CH 500V 9A TO252-3
Package
TO-252
Lifecycle Status
Active
Datasheet
IPD50R399CP Datasheet
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Technical Specifications
Infineon Technologies IPD50R399CP MOSFETs technical specifications.
General
RoHS
Yes
Mounting Type
SMT
Vds Max
500.0 V
Ptot Max
83.0 W
Idpuls Max
20.0 A
Vgs Th Max
3.5 V
Vgs Th Min
2.5 V
Rthjc Max
1.5 K/W
Rthja Max
62.0 K/W
Operating Temperature Min
-55.0 °C
Alternate Parts Comparison (IPD50R399CP vs IPD50R3K0CEAUMA1 vs IPD50R280CEAUMA1 vs IPD50R500CEAUMA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3 |
| Mounting Type | SMT | -- | SMD/SMT | SMD/SMT |
| IC Max | 9.0 A | -- | -- | -- |
| Idpuls Max | 20.0 A | -- | -- | -- |
| Operating Temperature Min | -55.0 °C | -- | -- | -- |
| Polarity | N | -- | -- | -- |
| Ptot Max | 83.0 W | -- | -- | -- |
| Rds on Max | 399.0 mΩ | -- | -- | -- |
| Rthja Max | 62.0 K/W | -- | -- | -- |
| Rthjc Max | 1.5 K/W | -- | -- | -- |
| Vds Max | 500.0 V | -- | -- | -- |
| Action |
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