Infineon Technologies IPB60R250CP MOSFETs
MOSFET N-CH 650V 12A TO263-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB60R250CP
Base Model
Detailed Description
MOSFET N-CH 650V 12A TO263-3
Package
D2PAK-3
Lifecycle Status
Active
Datasheet
IPB60R250CP Datasheet
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Technical Specifications
Infineon Technologies IPB60R250CP MOSFETs technical specifications.
General
RoHS
Yes
Feature Process Technology
CoolMOS
Feature Configuration
Single
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
600
Feature Maximum Gate Source Voltage V
±20
Feature Maximum Gate Threshold Voltage V
3.5
Feature Maximum Continuous Drain Current a
12
Related Parts Comparison (IPB60R250CP vs IPB60R380C6 vs IPB60R280C6ATMA1 vs IPB60R099C7ATMA1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | RoHS Compliant By Exemption | Yes | Yes |
| Package | D2PAK-3 | -- | D2PAK-3 (TO-263-3) | TO-263-3 |
| Series | -- | CoolMOS C6 | CoolMOS C6 | CoolMOS C7 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 9 ns | 12 ns | 4.5 ns |
| ID Continuous Drain Current | -- | 10.6 A | 13.8 A | 22 A |
| Part Aliases | -- | IPB6R38C6XT SP000660634 IPB60R380C6ATMA1 | IPB60R280C6 SP000687550 | IPB60R099C7 SP001297998 |
| Pd Power Dissipation | -- | 83 W | 104 W | 110 W |
| Action |
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