Infineon Technologies IPB60R099P7ATMA1 MOSFETs
MOSFET N-CH 600V 31A D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IPB60R099P7ATMA1
Base Model
Detailed Description
MOSFET N-CH 600V 31A D2PAK
Package
PG-TO263-3
Lifecycle Status
Active
Datasheet
IPB60R099P7ATMA1 Datasheet
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Technical Specifications
Infineon Technologies IPB60R099P7ATMA1 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
31 A
Rds on Drain Source Resistance
77 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (IPB60R099P7ATMA1 vs IPB60R380C6 vs IPB60R250CP vs IPB60R099C6)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | -- | Yes | Yes |
| Package | PG-TO263-3 | -- | D2PAK-3 | TO-263 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 5 ns | -- | -- | -- |
| ID Continuous Drain Current | 31 A | -- | -- | -- |
| Part Aliases | IPB60R099P7 SP001664910 | -- | -- | -- |
| Pd Power Dissipation | 117 W | -- | -- | -- |
| Qg Gate Charge | 45 nC | -- | -- | -- |
| Action |
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